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october 2015 docid028488 rev 1 1 / 15 this is preliminary information on a new product now in development or undergoing evaluation. d etails are subject to change without notice. www.st.com STGF15M65DF2 trench gate field - stop igbt m series, 650 v 15 a low loss datasheet - preliminary data figure 1 : internal schematic diagram features ? 6 s of short - circuit withstand time ? v ce(sat) = 1.55 v (typ.) @ i c = 15 a ? tight parameter distribution ? safer paralleling ? low thermal resistance ? soft and very fa st recovery antiparallel diode applications ? motor control ? ups ? pfc description this device is an igbt developed using an advanced proprietary trench gate field - stop structure. the device is part of the m series of igbts, which represents an optimum compromise in performance to maximize the efficiency of inverter systems where low loss and short - circuit capability are essential. furthermore, a positive v ce(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. tabl e 1: device summary order code marking package packing STGF15M65DF2 g15m65df2 to - 220fp tube t o-220f p
contents STGF15M65DF2 2 / 15 docid028488 rev 1 contents 1 electrical ratings ................................ ................................ ............. 3 2 electrical characteristics ................................ ................................ 4 2.1 electrical characteristics (curves) ................................ ...................... 6 3 test circuits ................................ ................................ ................... 11 4 package information ................................ ................................ ..... 12 4.1 to - 220fp package information ................................ ...................... 12 5 revision history ................................ ................................ ............ 14
STGF15M65DF2 electrical ratings docid028488 rev 1 3 / 15 1 electrical ratings table 2: absolute maximum ratings symbol parameter value unit v ces collector - emitter voltage (v ge = 0 v) 650 v i c (1) c ontinuous collector current at t c = 25 c 30 a continuous collector current at t c = 100 c 15 i cp (2) pulsed collector current 60 a v ge gate - emitter voltage 20 v i f (1) c ontinuous forward current at t c = 25 c 30 a continuous forward current at t c = 100 c 15 i fp (2) pulsed forward current 60 a v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s, t c = 25 c) 2.5 kv p tot total dissipation at t c = 25 c 31 w t stg storage temperature range - 55 to 150 c t j operating junction temperature - 55 to 175 c notes: (1) limited by maximum junction temperature. (2) pulse width limited by maximum junction temperature. table 3: thermal data symbol parameter value unit r thjc thermal resistance junction - case igbt 4.8 c/w r thjc thermal resistance junction - case diode 6.25 r thja thermal resistance junction - ambient 62.5
electrical characteristics STGF15M65DF2 4 / 15 docid028488 rev 1 2 electrical characteristics t c = 25 c unless otherwise specified table 4: static characteristics symbol parameter test conditions min. typ. max. unit v (br)ces collector - emitter breakdown voltage v ge = 0 v, i c = 2 ma 650 v v ce(sat) collector - emitter saturation voltage v ge = 15 v, i c = 15 a 1.55 2.0 v v ge = 15 v, i c = 15 a, t j = 125 c 1.9 v ge = 15 v, i c = 15 a, t j = 175 c 2.1 v f forward on - voltage i f = 15 a 1.7 v i f = 15 a, t j = 125 c 1.5 i f = 15 a, t j = 175 c 1.4 v ge(th) gate threshold voltage v ce = v ge , i c = 500 a 5 6 7 v i ces collector cut - off current v ge = 0 v, v ce = 650 v 25 a i ges gate - emitter leakage current v ce = 0 v, v ge = 20 v 250 a table 5: dynamic characteristics symbol parameter test conditions min. typ. max. unit c ies input capacitance v ce = 25 v, f = 1 mhz, v ge = 0 v - 1250 - pf c oes output capacitance - 80 - c res reverse transfer capacitance - 25 - q g total gate charge v cc = 520 v, i c = 15 a, v ge = 15 v (see figure 30: " gate charge test circuit" ) - 45 - nc q ge gate - emitter charge - 11 - q gc gate - collector charge - 15 -
STGF15M65DF2 electrical characteristics docid028488 rev 1 5 / 15 table 6: igbt switching characteristics (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) turn - on delay time v ce = 400 v, i c = 15 a, v ge = 15 v, r g = 12 (see figure 29: " test circuit for inductive load switching" ) 24 - ns t r current rise time 7.8 - ns (di/dt) on turn - on current slope 1570 - a/s t d(off) turn - off - delay time 93 - ns t f current fall time 106 - ns e on (1) turn - on switching losses 0.09 - mj e off (2) turn - off switching losses 0.45 - mj e ts total switching losses 0.54 - mj t d(on) turn - on delay time v ce = 400 v, i c = 15 a, v ge = 15 v, r g = 12 t j = 175 c (see figure 29: " test circuit for inductive load switching" ) 24.8 - ns t r current rise time 9.2 - ns (di/dt) on turn - on current slope 1300 - a/s t d(off) turn - off - delay time 96 - ns t f current fall time 169 - ns e on t urn - on switching losses 0.22 - mj e off t urn - off switching losses 0.61 - mj e ts total switching losses 0.83 - mj t sc short - circuit withstand time v cc 400 v, v ge = 15 v, t jstart = 150 c 6 - s notes: (1) energy losses include reverse recovery of the diode. (2) turn - off losses also include the tail of the collector current. table 7: diode switching characteristics (inductive load) symbol parameter test conditions min. typ. max. unit t rr reverse recovery time i f = 15 a, v r = 400 v, v ge = 15 v (see figure 29: " test circuit for inductive load switching" ) di/dt = 1000 a/s - 142 - ns q rr reverse recovery charge - 525 - nc i rrm reverse recovery current - 13.4 - a di rr /dt peak rate of fall of reverse recovery current during t b - 790 - a/s e rr reverse recovery energy - 64 - j t rr reverse recovery time i f = 15 a, v r = 400 v, v ge = 15 v t j = 175 c (see figure 29: " test circuit for inductive load switching" ) di/dt = 1000 a/s - 241 - ns q rr reverse recovery charge - 1690 - nc i rrm reverse recovery current - 20 - a di rr /dt peak rate of fall of reverse recovery current during t b - 420 - a/s e rr reverse recovery energy - 176 - j
electrical characteristics STGF15M65DF2 6 / 15 docid028488 rev 1 2.1 electrical characteristics (curves) figure 2 : power dissipation vs. case temperature figure 3 : collector current vs. case temperature figure 4 : output characteristics (tj = 25 c) figure 5 : output characteristics (tj = 175 c) figure 6 : vce(sat) vs. junction temperature figure 7 : vce(sat) v s. collector current
STGF15M65DF2 electrical characteristics docid028488 rev 1 7 / 15 figure 8 : collector current vs. switching frequency figure 9 : forward bias safe operating area figure 10 : transfer characteristics figure 11 : diode vf vs. forward current figure 12 : normalized vge(th) vs. junction temperature figure 13 : normalized v(br)ces vs. junction temperature
electrical characteristics STGF15M65DF2 8 / 15 docid028488 rev 1 figure 14 : capacitance variations figure 15 : gate charge vs. gate - emitter voltage figure 16 : switching loss vs. collector current figure 17 : switching loss vs. gate resistance figure 18 : switching loss vs. temperature figure 19 : switching loss vs. collector emitter voltage
STGF15M65DF2 electrical characteristics docid028488 rev 1 9 / 15 figure 20 : short - circuit time and current vs. vge figure 21 : switching times vs. collector current figure 22 : switching times vs. gate resistance figure 23 : reverse recovery current vs. diode current slope figure 24 : reverse recovery time vs. diode current slope figure 25 : reverse recovery charge vs. diode current slope
electrical characteristics STGF15M65DF2 10 / 15 docid028488 rev 1 figure 26 : reverse recovery energy vs. diode current slope figure 27 : thermal impedance for igbt figure 28 : thermal impedance for diode
STGF15M65DF2 test circuits docid028488 rev 1 11 / 15 3 test circuits figure 29 : test circuit for inductive load switching figure 30 : gate charge test circuit figure 31 : switching waveform figure 32 : diode reverse recovery waveform am01505v1 v i v gmax p w i g =cons t v cc 12 v 47 k 1 k 100 2.7 k 47 k 1 k 2200 f d.u. t . 100 nf v g t am01507v1 10% v rrm dv/dt di/dt i rrm i f t rr t s t f q rr i rrm a a c e g b r g + - g c 3 . 3 f 1 0 0 0 f l = 1 00 f v cc e d . u . t b a m 0 15 0 4 v 1
package info rmation STGF15M65DF2 12 / 15 docid028488 rev 1 4 package information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ec opack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. 4.1 to - 220fp package information figure 33 : to - 220fp package outline
STGF15M65DF2 package information docid028488 rev 1 13 / 15 table 8: to - 220fp package mechanical data dim. mm min. typ. max. a 4.4 4.6 b 2.5 2.7 d 2.5 2.75 e 0.45 0.7 f 0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h 10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2
revision history STGF15M65DF2 14 / 15 docid028488 rev 1 5 revision history table 9: document revision history date revision changes 14 - oct - 2015 1 first release.
STGF15M65DF2 docid028488 rev 1 15 / 15 important notice C please read carefully stmicroelectronics nv and its subsidiaries (st) reserve the right to make changes, corrections, enhancements, modifications , and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant information on st products before placing orders. st products are sold pursuant to sts terms and conditions of sale in place at the time of or der acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and s t assumes no liability for application assistance or the design of purchasers products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information se t forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2015 stmicroelectronics C all rights reserved

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